Electron transport in a quasi-one dimensional channel on suspended helium films

Quasi-one dimensional electron systems have been created using a suspended helium film on a structured substrate. The electron mobility along the channel is calculated by taking into account the essential scattering processes of electrons by helium atoms in the vapor phase, ripplons, and surface defects of the film substrate. It is shown that the last scattering mechanism may dominate the electron mobility in the low temperature limit changing drastically the temperature dependence of the mobility in comparison with that controlled by the electron-ripplon scattering. Typeset using REVTEX 1 There has been great interest in the study of the quasi-one-dimensional electron system (Q1DES) produced on the liquid helium surface [1–9] in which the motion of usual quasitwo-dimensional (Q2D) surface electrons (SE) [10] is restricted in one more spatial direction. In most methods to realize the Q1D electron system, the charged channels are formed when parallel strips of a dielectric substrate are filled with liquid helium due to the capillary forces. The curvature radius R of the liquid into the strip can be varied in wide range. The profile of the liquid surface across the channel (y direction) can be assumed to have a semicircular form z0 = R [